In PECVD deposition, the materials to be deposited are placed in the chamber and, thanks to this process, they pass from the gaseous state to the solid state (e.g. silica, SiO2). The pieces to be treated are placed inside the vacuum chamber which is brought to pressures of a few pascals.

This particular process is also known as “low temperature CDV”. The plasma, in fact, is used to significantly lower the temperatures at which the material is deposited on the piece, allowing the use of substrates that otherwise would not have withstood the high temperatures.

The main advantages of this deposition are

• homogeneous film,
• very high hardness
• does not modify the macrostructure of the piece.